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Oct. 07, 2016
Researchers demonstrated molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106. Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state. Science
Oct. 4, 2016

Fraunhofer EMFT Signs Agreement to Implement ZiBond and DBI Technologies in MEMS Applications.

Mar. 2, 2016

Chipworks report reveals a 5 metal (Cu) CMOS image sensor (CIS) die and a 7 metal (6 Cu + 1 Al) image signal processor (ISP) die 3D-stacked by DBI technology in the Sony IMX260 used in Samsung Galaxy S7 camera.

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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2017), The University of Tokyo, Hongo, Japan Abstract Submission Deadline: Feb. 10th, 2017

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